Light emitting diode device

ABSTRACT

The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of and claims the priority benefit of U.S. application Ser. No. 14/918,580, filed on Oct. 21, 2015, now pending, which is a continuation application of U.S. application Ser. No. 13/661,272, filed on Oct. 26, 2012, now issued as U.S. Pat. No. 9,196,797. The prior U.S. application Ser. No. 13/661,272 claims the priority benefit of Taiwan application serial no. 100143830, filed on Nov. 29, 2011. The entirety of each of the above-mentioned patent applications is hereby incorporated by reference herein and made a part of this specification.

FIELD OF THE INVENTION

The present invention relates generally to a light emitting diode (LED) device, and particularly to an LED device having excellent Ohmic-contact characteristics and light emitting efficiency.

BACKGROUND OF THE INVENTION

Electricity is an indispensable energy nowadays. No matter lighting devices, home appliances, communication apparatuses, transportation, or industrial equipment, without electricity, none can operate. Current global energy mainly comes from burning petroleum or coal. However, the supply of petroleum or coal is not inexhaustible. If people don't search actively for alternative energy, when petroleum or coal is exhausted, the world will encounter energy crisis. For solving the problem of energy crisis, in addition to developing positively various kinds of renewable energy, it is required to save energy and use energy efficiently for improving the usage efficiency of energy.

Take lighting equipment as an example. Light equipment is indispensable in human lives. As technologies develop, lighting tools having better luminance and more power saving are gradually provided. Currently, an emerging light source is LED. In comparison with light sources according to prior art, LEDs have the advantage of small size, power saving, good light emitting efficiency, long lifetime, fast response time, no thermal radiation, and no pollution of poisonous materials such as mercury. Thereby, in recent years, the applications of LEDs are wide-spreading. In the past, the brightness of LEDs still cannot replace the light sources according to the prior art. As the technologies advance, high-luminance LEDs (high-power LEDs) are developed recently and sufficient to replace the light sources according to the prior art.

The epitaxial structure of LED is composed of semiconductor layers of p-type and n-type gallium-nitride family and light emitting layers. The light emitting efficiency of LED is determined by the quantum efficiency of the light emitting layer as well as the extraction efficiency of the LED. The method for increasing the quantum efficiency is mainly to improve the epitaxial quality and the structure of the light emitting layer; the key to increasing the extraction efficiency is to reduce the energy loss caused by reflection of the light emitted by the light emitting layer within the LED.

Depending on the property of the material of the p-type semiconductor layer and the work function of the metal used as the reflection layer, an Ohmic-contact or a Schottky contact is formed between the p-type semiconductor layer and the reflection layer of a general LED. When the resistance of an Ohmic-contact is too high, the operating characteristics of LED will be affected. It is thereby required to lower the resistance of the Ohmic-contact. The Ohmic-contact characteristics between the p-type semiconductor layer and the reflection layer can be improved by disposing an Ohmic-contact layer therebetween. The Ohmic-contact layer according to the prior art adopts a Ni/Au Ohmic-contact layer and heat treatment is performed on the Ohmic-contact layer for forming a good Ohmic-contact. Nonetheless, the light absorption rate of the Ni/Au Ohmic-contact layer is higher. Besides, the interface between the p-type semiconductor layer and the Ni—Au Ohmic-contact layer is roughened due to the heat treatment and leading to inability in reflecting light. Consequently, the reflection efficiency of the LED will be reduced.

For solving the problems described above, please refer to FIG. 1, which shows a structure diagram of the LED device according to the prior art. As shown in the figure, an Ohmic-contact layer 11′ is disposed between the p-type semiconductor layer 10′ and the reflection layer 12′. The Ohmic-contact layer 11′ uses a single-layer metal-oxide layer and has high electrical conductivity. Although the Ohmic-contact layer 11′ has high electrical conductivity, it lowers the light transmittance, and hence leading to lowering of the light emitting efficiency of the LED. If the Ohmic-contact layer 11′ has high light transmittance, its electrical conductivity will be reduced, making the Ohmic-contact characteristics of the Ohmic-contact layer 11′ inferior. Thereby, the Ohmic-contact layer 11′ according to the prior art, which adopts a single-layer metal-oxide layer, cannot have good Ohmic-contact characteristics while maintaining superior light emitting efficiency.

Accordingly, the present invention provides an LED device and a flip-chip packaged LED device having excellent Ohmic-contact characteristics as well as superior light emitting efficiency.

SUMMARY

An objective of the present invention is to provide an LED device. The LED device can enhance its Ohmic-contact characteristics effectively while maintaining superior light emitting efficiency.

An LED device according to an embodiment of the present invention comprises a first-type doping layer; a second-type doping layer; a light emitting layer disposed between the first-type doping layer and the second-type doping layer; an Ohmic-contact layer disposed on the second-type doping layer; a material layer disposed on the Ohmic-contact layer, the material layer at least comprises a metal oxide layer; a first electrode disposed on and electrically connected to the first-type doping layer; a second electrode; and a metal layer disposed between the second electrode and the Ohmic-contact layer, wherein the second electrode being electrically connected to the Ohmic-contact layer through the metal layer.

An LED device according to an embodiment of the present invention comprises a first-type doping layer; a second-type doping layer; a light emitting layer disposed between the first-type doping layer and the second-type doping layer; an Ohmic-contact layer disposed on the second-type doping layer; an oxide stacking layer comprising a plurality of oxide layers stacked on the Ohmic-contact layer; a first electrode disposed on and electrically connected to the first-type doping layer; a second electrode electrically connected to the Ohmic-contact layer; and a metal reflection layer, wherein the oxide stacking layer and the metal reflection layer are disposed between the second electrode and the Ohmic-contact layer.

An LED device according to an embodiment of the present invention comprises a first-type doping layer; a second-type doping layer; a light emitting layer disposed between the first-type doping layer and the second-type doping layer; an Ohmic-contact layer disposed on the second-type doping layer; an oxide stacking layer comprising a plurality of oxide layers stacked on the Ohmic-contact layer; a first electrode disposed on and electrically connected to the first-type doping layer; a second electrode electrically connected to the Ohmic-contact layer; and a metal reflection layer, wherein the oxide stacking layer and the metal reflection layer are disposed between the second electrode and the Ohmic-contact layer, and the second electrode is electrically connected to the Ohmic-contact layer through the metal reflection layer.

An LED device according to an embodiment of the present invention comprises a first-type doping layer; a second-type doping layer; a light emitting layer disposed between the first-type doping layer and the second-type doping layer; an Ohmic-contact layer disposed on the second-type doping layer; a first electrode disposed on and electrically connected to the first-type doping layer; a second electrode electrically connected to the Ohmic-contact layer; a metal reflection layer disposed between the second electrode and the Ohmic-contact layer; and at least one oxide layer disposed between the Ohmic-contact layer and the metal reflection layer.

An LED device according to an embodiment of the present invention comprises a first-type doping layer; a second-type doping layer; a light emitting layer disposed between the first-type doping layer and the second-type doping layer; an Ohmic-contact layer disposed on the second-type doping layer; a first electrode disposed on and electrically connected to the first-type doping layer; a second electrode; a metal reflection layer disposed between the second electrode and the Ohmic-contact layer; and at least one oxide layer disposed between the Ohmic-contact layer and the metal reflection layer, wherein the second electrode is electrically connected the Ohmic-contact layer through the metal reflection layer.

An LED device according to an embodiment of the present invention comprises a first-type doping layer; a second-type doping layer; a light emitting layer disposed between the first-type doping layer and the second-type doping layer; an Ohmic-contact layer disposed on the second-type doping layer; a first electrode disposed on and electrically connected to the first-type doping layer; a second electrode electrically connected to the Ohmic-contact layer; and a material stacking layer disposed between the second electrode and the Ohmic-contact layer, wherein the material stacking layer comprises a plurality of first material layers and a plurality of second material layers stacked alternately, and light transmittance of the first material layers differs from light transmittance of the second material layers.

According to the present invention, the highly conductive Ohmic-contact layer is used for giving good current conduction between the second-type doping layer and the reflection layer of the LED device and thus improving the Ohmic-contact characteristics of the LED device. In addition, the present invention further uses the planarized buffer layer disposed between the Ohmic-contact layer and the reflection layer for making the surface of the Ohmic-contact layer smooth, which facilitates smooth adhesion of the reflection layer to the planarized buffer layer as well as reducing the scattering phenomenon of the reflected light. Thereby, superior light emitting efficiency can be achieved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a structure diagram of the LED device according to the prior art;

FIG. 2 shows a structure diagram according to a preferred embodiment of the present invention;

FIG. 3 shows a structure diagram according to another preferred embodiment of the present invention;

FIG. 4 shows a structure diagram according to another preferred embodiment of the present invention; and

FIG. 5 shows a structure diagram according to another preferred embodiment of the present invention.

DETAILED DESCRIPTION

In order to make the structure and characteristics as well as the effectiveness of the present invention to be further understood and recognized, the detailed description of the present invention is provided as follows along with embodiments and accompanying figures.

FIG. 2 shows a structure diagram according to a preferred embodiment of the present invention. As shown in the figure, the present embodiment provides an LED device 22, which comprises a device substrate 221, a first-type doping layer 222, a light emitting layer 223, a second-type doping layer 224, an Ohmic-contact layer 225, a planarized buffer layer 226, a reflection layer 227, and two electrodes 228, 229. The first-type doping layer 222 is disposed on the device substrate 221; the light emitting layer 223 is disposed on the first-type doping layer 222; and the second-type doping layer 224 is disposed on the light emitting layer 223. According to the present embodiment, the first-type doping layer 222 is an n-type semiconductor layer, and the second-type doping layer 224 is a p-type semiconductor layer. Besides, the Ohmic-contact layer 225 is a metal thin film or a metal-oxide layer with light transmittance higher than 90% and thickness less than 5000 angstroms (Å). The metal thin film can be composed by gold, nickel, platinum, aluminum, chrome, tin, indium, and their mixtures or alloys. The metal-oxide layer is chosen from the group consisting of indium-tin oxide, cerium-tin oxide, antimony-tin oxide, indium-zinc oxide, and zinc oxide.

Besides, the planarized buffer layer 226 is disposed on the Ohmic-contact layer 225. The planarized buffer layer 226 is a metal-oxide layer with light transmittance greater than 95%; the metal-oxide layer is chosen from the group consisting of indium-tin oxide, cerium-tin oxide, antimony-tin oxide, indium-zinc oxide, and zinc oxide. The reflection layer 227 is disposed on the planarized buffer layer 226. The root-mean-square roughness of the surface between the planarized buffer layer 226 and the reflection layer 227 is less than 20 Å. The reflection layer 227 is chosen from the group consisting of silver, gold, aluminum, and copper. Finally, the two electrodes 228, 229 are disposed on the first-type doping layer 222 and the reflection layer 227, respectively.

FIG. 3 shows a structure diagram according to another preferred embodiment of the present invention. As shown in the figure, the LED device 22 according to the above embodiment is used in a flip-chip packaged LED device 2, which comprises a packaging substrate 20 and the LED device 22. The LED device 22 is flipped on and connected electrically with the packaging substrate 20. The LED device 22 is connected electrically with the packaging substrate 20 by a eutectic structure 24.

The Ohmic-contact characteristics between the second-type doping layer 224 and the reflection layer 227 in the above embodiment is enhanced mainly by means of the Ohmic-contact layer 225. Because the Ohmic-contact layer 225 has high electrical conductivity, the current conduction between the second-type doping layer 224 and the reflection layer 227 can be improved effectively, and thus enhancing the Ohmic-contact characteristics between the second-type doping layer 224 and the reflection layer 227.

Because the Ohmic-contact layer 225 has high electrical conductivity, its light transmittance is lowered. In order to maintain the light transmittance of the Ohmic-contact layer 225, its thickness is less than 5000 Å. Thereby, the light emitted by the light emitting layer 223 will not be absorbed too much by the Ohmic-contact layer 225, and hence enabling the light emitting efficiency of the LED device unaffected.

Because the thickness of the Ohmic-contact layer 225 is very thin, its surface is relatively rougher. For avoiding the scattering phenomenon on the reflected light produced by the surface of the Ohmic-contact layer 225, according to the present embodiment, the planarized buffer layer 226 is used for mending the surface of the Ohmic-contact layer 225. The thickness of the planarized buffer layer 226 is between 500 to 5000 Å for reducing effectively the scattering phenomenon on the reflected light produced by the surface of the Ohmic-contact layer 225. The root-mean-square roughness of the surface between the planarized buffer layer 226 and the reflection layer 227 is less than 20 Å for adhering the reflection layer 227 smoothly to the planarized buffer layer 226. In addition, the reflection layer 227 can have the effect of mirror reflection by means if the planarized buffer layer 226.

The thickness of the Ohmic-contact layer 225 according to the present embodiment is thinner with light transmittance greater than 90%. Thereby, the light emitted by the light emitting layer 223 will not be absorbed too much by the Ohmic-contact layer 225; most of the light can transmit the Ohmic-contact layer 225. Besides, the light transmittance of the planarized buffer layer 226 is higher than 95%. Most of the light can transmit the planarized buffer layer 226 and reach the reflection layer 227. Hence, the light emitting efficiency of the LED device 22 will not be affected.

By comparing the present invention with the prior art, it is known that according to the prior art, only the Ohmic-contact layer, which is a single-layer metal-oxide layer, is disposed between the reflection layer and the second-type doping layer. By making the Ohmic-contact layer highly electrically conductive, its light transmittance will be lowered, leading to reduction in the light emitting efficiency of the LED device, which, in turn, lowers the light emitting efficiency of the flip-chip packaged LED device. If the Ohmic-contact layer is thinned, its surface will be rough, resulting in scattering of the reflected light. The LED device 22 according to the present invention adopts the planarized buffer layer 226 disposed on the thin Ohmic-contact layer 225 for reducing the scattering phenomenon on the reflected light owing to the surface of the Ohmic-contact layer 225. In addition, the Ohmic-contact layer 225 according to the present embodiment can make the Ohmic-contact characteristics between the second-type doping layer 224 and the reflection layer 227 superior without affecting the light emitting efficiency of the LED device 22. Accordingly, the light emitting efficiency of the flip-chip packaged LED device 2 will not be affected either.

FIG. 4 shows a structure diagram according to another preferred embodiment of the present invention. As shown in the figure, in addition to the embodiment shown in FIG. 2, the LED device 22 further comprises a cover layer 230 disposed between the reflection layer 227 and the electrode 229 and extending to the sidewall of the reflection layer 227. The cover layer 230 is used for prevent the migration phenomenon of the metal ions in the reflection layer 227.

FIG. 5 shows a structure diagram according to another preferred embodiment of the present invention. As shown in the figure, the present embodiment provides another LED device 22. The difference between the LED device 22 and the one in FIG. 2 is that the LED device 22 according to the present embodiment has a plurality of Ohmic-contact layers 225 a and a plurality of planarized buffer layers 226 a stacked together. Each Ohmic-contact layer 225 a has the characteristics of high electrical conductivity and high refractivity. Thereby, before part of the light emitted by the light emitting layer 223 reaches the reflection layer 227, the light has already been refracted by the plurality of Ohmic-contact layers 225 a for enhancing the light emitting efficiency of the flip-chip packages LED device 2. Besides, the plurality of planarized buffer layers 226 a have the effect of smoothening each Ohmic-contact layer 225 a. Hence, the scattering phenomenon on the reflected light caused by the surface of each Ohmic-contact layer 225 a can be avoided.

To sum up, the present invention provides an LED device and a flip-chip packages LED device. The LED device is flipped on and connected electrically with the packaging substrate and thus forming the flip-chip packaged LED device. The LED device has the Ohmic-contact layer and the planarized buffer layer. The Ohmic-contact layer enhances the current conduction between the second-type doping layer and the reflection layer and thus improving the Ohmic-contact characteristics of the LED device. The planarized buffer layer smoothens the surface of the Ohmic-contact layer, which enables the reflection layer to attach to the planarized buffer layer smoothly and achieving the effect of mirror reflection as well as reducing the scattering phenomenon of the reflected light. By disposing the Ohmic-contact layer and the planarized buffer layer, the LED device and the flip-chip packages LED device according to the present invention can have superior Ohmic-contact characteristics without affecting the light emitting efficiency thereof.

Accordingly, the present invention conforms to the legal requirements owing to its novelty, nonobviousness, and utility. However, the foregoing description is only embodiments of the present invention, not used to limit the scope and range of the present invention. Those equivalent changes or modifications made according to the shape, structure, feature, or spirit described in the claims of the present invention are included in the appended claims of the present invention. 

1. A light emitting diode device, comprising: a first-type doping layer; a second-type doping layer; a light emitting layer disposed between the first-type doping layer and the second-type doping layer; an Ohmic-contact layer disposed on the second-type doping layer; a stack of oxide layers comprising at least one metal oxide layer, disposed on the Ohmic-contact layer; a first electrode electrically connected to the first-type doping layer; a second electrode electrically connected to the Ohmic-contact layer; and a metal layer disposed between the second electrode and the Ohmic-contact layer, wherein the second electrode is electrically connected to the Ohmic-contact layer through the metal layer, wherein the stack of oxide layers at least comprises a first oxide layer having a higher light transmittance and a second oxide layer having a lower light transmittance, wherein the first oxide layer is disposed between the Ohmic-contact layer and the second oxide layer.
 2. The light emitting diode device of claim 1, wherein a light transmittance of the Ohmic-contact layer is greater than 90%.
 3. The light emitting diode device of claim 1, wherein the light transmittance of the first oxide layers is greater than 95%.
 4. The light emitting diode device of claim 1, wherein the light transmittance of the first oxide layers is greater than a light transmittance of the Ohmic-contact layer.
 5. The light emitting diode device of claim 1, wherein an electrical conductivity of the first oxide layer is lower than an electrical conductivity of the Ohmic-contact layer.
 6. The light emitting diode device of claim 1 further comprising a cover layer disposed on the metal layer and extending to a sidewall of the metal layer.
 7. A light emitting diode device, comprising: a first-type doping layer; a second-type doping layer; a light emitting layer disposed between the first-type doping layer and the second-type doping layer; an Ohmic-contact layer disposed on the second-type doping layer; a stack of oxide layers comprising at least one metal oxide layer, disposed on the Ohmic-contact layer; a first electrode electrically connected to the first-type doping layer; a second electrode electrically connected to the Ohmic-contact layer; and a metal layer disposed between the second electrode and the Ohmic-contact layer, wherein the second electrode is electrically connected to the Ohmic-contact layer through the metal layer, wherein the stack of oxide layers at least comprises a first oxide layer having a lower refractivity and a second oxide layer having a higher refractivity, wherein the first oxide layer is disposed between the Ohmic-contact layer and the second oxide layer.
 8. The light emitting diode device of claim 7, wherein a light transmittance of the Ohmic-contact layer is greater than 90%.
 9. The light emitting diode device of claim 7, wherein a light transmittance of the first oxide layers is greater than 95%.
 10. The light emitting diode device of claim 7, wherein a light transmittance of one of the first oxide layers is higher than a light transmittance of the Ohmic-contact layer.
 11. The light emitting diode device of claim 7, wherein an electrical conductivity of the first oxide layer is lower than an electrical conductivity of the Ohmic-contact layer.
 12. The light emitting diode device of claim 7 further comprising a cover layer disposed on the metal layer and extending to a sidewall of the metal layer.
 13. A light emitting diode device, comprising: a first-type doping layer; a second-type doping layer; a light emitting layer disposed between the first-type doping layer and the second-type doping layer; an Ohmic-contact layer disposed on the second-type doping layer; a stack of oxide layers comprising at least one metal oxide layer, disposed on the Ohmic-contact layer; a first electrode electrically connected to the first-type doping layer; a second electrode electrically connected to the Ohmic-contact layer; and a metal reflection layer disposed between the second electrode and the Ohmic-contact layer, wherein the second electrode is electrically connected to the Ohmic-contact layer through the metal reflection layer, wherein the stack of oxide layers at least comprises a first oxide layer having a lower electrical conductivity and a second oxide layer having a higher electrical conductivity, wherein the first oxide layer is disposed between the Ohmic-contact layer and the second oxide layer.
 14. The light emitting diode device of claim 13, wherein a light transmittance of the Ohmic-contact layer is greater than 90%.
 15. The light emitting diode device of claim 13, wherein a light transmittance of the first oxide layer is greater than 95%.
 16. The light emitting diode device of claim 13, wherein a light transmittance of the first oxide layer is higher than a light transmittance of the Ohmic-contact layer.
 17. The light emitting diode device of claim 13 further comprising a cover layer disposed on the metal layer and extending to a sidewall of the metal layer.
 18. The light emitting diode device of claim 13, wherein a refractivity of the first oxide layer is lower than a refractivity of the Ohmic-contact layer. 